SiC Crystal Dislocation High-Sensitivity Visualization Device XS-1
Visualize crystal defects and internal strains present inside SiC wafers and other materials with high sensitivity and in real-time!
The XS-1 is a device that enables high-sensitivity, real-time visualization of crystal-derived defects (such as micropipes, threading dislocations, screw dislocations, basal plane dislocations, stacking faults, inclusions, etc.) present within SiC wafers, which are attracting attention as semiconductors for power devices. It allows for the observation of various atomic-level crystal defects that cannot be captured by laser inspection devices or polarized microscopes using visible light. 【Features】 ■ High-sensitivity, real-time visualization of crystal defects and internal stress present within SiC wafers and similar materials ■ Capability to observe various atomic-level crystal defects that cannot be detected by laser inspection devices or polarized microscopes ■ Enables material evaluation at the field level, significantly reducing the associated costs *For more details, please request materials or view the PDF data available for download.
- Company：Mipox
- Price：Other
